JPS6241427B2 - - Google Patents

Info

Publication number
JPS6241427B2
JPS6241427B2 JP54130143A JP13014379A JPS6241427B2 JP S6241427 B2 JPS6241427 B2 JP S6241427B2 JP 54130143 A JP54130143 A JP 54130143A JP 13014379 A JP13014379 A JP 13014379A JP S6241427 B2 JPS6241427 B2 JP S6241427B2
Authority
JP
Japan
Prior art keywords
region
substrate
transistor
drain
impurity concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54130143A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5654071A (en
Inventor
Hiroshi Sakuma
Toshuki Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP13014379A priority Critical patent/JPS5654071A/ja
Priority to US06/195,683 priority patent/US4394674A/en
Publication of JPS5654071A publication Critical patent/JPS5654071A/ja
Publication of JPS6241427B2 publication Critical patent/JPS6241427B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/378—Contact regions to the substrate regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP13014379A 1979-10-09 1979-10-09 Insulated gate field-effect transistor Granted JPS5654071A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP13014379A JPS5654071A (en) 1979-10-09 1979-10-09 Insulated gate field-effect transistor
US06/195,683 US4394674A (en) 1979-10-09 1980-10-09 Insulated gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13014379A JPS5654071A (en) 1979-10-09 1979-10-09 Insulated gate field-effect transistor

Publications (2)

Publication Number Publication Date
JPS5654071A JPS5654071A (en) 1981-05-13
JPS6241427B2 true JPS6241427B2 (en]) 1987-09-02

Family

ID=15026991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13014379A Granted JPS5654071A (en) 1979-10-09 1979-10-09 Insulated gate field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5654071A (en])

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59184560A (ja) * 1983-03-31 1984-10-19 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 半導体接点構造体
US5229633A (en) * 1987-06-08 1993-07-20 U.S. Philips Corporation High voltage lateral enhancement IGFET
DE69225552T2 (de) * 1991-10-15 1999-01-07 Texas Instruments Inc., Dallas, Tex. Lateraler doppel-diffundierter MOS-Transistor und Verfahren zu seiner Herstellung
JP2012253230A (ja) * 2011-06-03 2012-12-20 Fujitsu Semiconductor Ltd 半導体装置及び半導体装置の製造方法

Also Published As

Publication number Publication date
JPS5654071A (en) 1981-05-13

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